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Samsung making 20nm-class, 64Gbit 3-bit NAND flash memory

Written by James Delahunty (Google+) @ 13 Oct 2010 10:49

Samsung making 20nm-class, 64Gbit 3-bit NAND flash memory Samsung Electronics Co., Ltd. announced today the industry's first production of a 3-bit-cell (3bit), 64 gigabit NAND flash using 20 nanometer-class process technology. The highly advanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards.
"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics.

"By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

Samsung's 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips.

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