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Intel, Samsung, Toshiba aim to halve semiconductor line widths

Written by James Delahunty (Google+) @ 29 Oct 2010 18:20 User comments (2)

Intel, Samsung, Toshiba aim to halve semiconductor line widths Intel Corp., Samsung Electronics Co Ltd and Toshiba Corp are to form a working group to develop the next generation of chip technology by 2016, according to the Nikkei daily.
The three will invite other players in the industry in a bid to develop chip manufacturing technologies that can more than halve the semiconductor line widths to nearly 10 nanometers by 2016. A nanometer is unit of length in the metric system that equals one-billionth of a meter.

According to the report, the Ministry of Economy, Trade and Industry in Japan will put up 5 billion yen toward an initial 10 billion yen in funds for R&D efforts, with the other half coming from members of the consortium itself.

Samsung and Toshiba are the world's largest and second largest makers of NAND-type memory respectively, and will use any resulting manufacturing technology to produce 10-nanometer class NAND flash memory chips, while Intel will use the technology for a new generation of powerful microprocessors.

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2 user comments

129.10.2010 20:42

We're barely getting into 32-nm. It's amazing how smaller these chips are getting each year. Wonder what's next after they hit the 10nm mark.

229.10.2010 22:11

Originally posted by mike.m:
We're barely getting into 32-nm. It's amazing how smaller these chips are getting each year. Wonder what's next after they hit the 10nm mark.
The dreaded day when Silicon transistors can't get any smaller without burning up? :S

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